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| inchange semiconductor product specification silicon pnp power transistors 2N5741 2n5742 description ? with to-3 package ? low collector saturation voltage ? fast switching speed applications ? for general?purpose switching and power amplifier applications. pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2N5741 -60 v cbo collector-base voltage 2n5742 open emitter -100 v 2N5741 -60 v ceo collector-emitter voltage 2n5742 open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -20 a p c collector power dissipation t c =100 ?? 65 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.875 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2N5741 2n5742 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N5741 -60 v ceo(sus) collector-emitter sustaining voltage 2n5742 i c =-0.2a ;i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-10a; i b =-1a -1.0 v v cesat-2 collector-emitter saturation voltage i c =-20a ;i b =-4a -3.0 v v besat base-emitter saturation voltage i c =-10a; i b =-1a -1.8 v v be base-emitter on voltage i c =-10a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =rated v cbo ; i e =0 -0.1 ma i cex collector cut-off current v ce = rated v ceo ; v be(off) =1.5v t c =150 ?? -0.5 -5.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-10a ; v ce =-5v 20 80 h fe-2 dc current gain i c =-20a ; v ce =-5v 10 f t transition frequency i c =-1a ; v ce =-10v 10 mhz inchange semiconductor product specification 3 silicon pnp power transistors 2N5741 2n5742 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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